Electrode area correction in the evaluation of DC electrical properties of ZnO-based varistors

Do Quang Tham; Huy Nguyen Trung; Hung Nguyen Tuan; Nguyen Tuan Anh; Nguyen Dinh Anh Son; Nguyen Thi Xuyen; Pham Thi Nam; Vo Thi Kieu Anh; Nguyen Van Trang; Cao Thi Hong; Nguyen Thi Thu Trang; Tran Dai Lam

doi:10.15625/2525-2518/23429

Author affiliations

Authors

Do Quang Tham \(^1\) Graduate University of Science and Technology, VAST, 18 Hoang Quoc Viet, Nghia Do Ward, Ha Noi, Viet Nam
\(^2\) Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Nghia Do Ward, Ha Noi, Viet Nam https://orcid.org/0000-0001-5480-4360
Nguyen Trung Huy \(^1\) Graduate University of Science and Technology, VAST, 18 Hoang Quoc Viet, Nghia Do Ward, Ha Noi, Viet Nam
\(^2\) Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Nghia Do Ward, Ha Noi, Viet Nam
Nguyen Tuan Hung \(^3\) Center for MicroElectronics and Information Technology (IMET), NACENTECH, MOST, C6 Building, Thanh Xuan Ward, Ha Noi, Viet Nam https://orcid.org/0009-0002-1519-9457
Nguyen Tuan Anh \(^1\) Graduate University of Science and Technology, VAST, 18 Hoang Quoc Viet, Nghia Do Ward, Ha Noi, Viet Nam
Nguyen Dinh Anh Son \(^4\) Hanoi University of Industry, 298 Cau Dien, Tay Tuu Ward, Ha Noi, Viet Nam
Nguyen Thi Xuyen \(^2\) Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Nghia Do Ward, Ha Noi, Viet Nam
Pham Thi Nam \(^2\) Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Nghia Do Ward, Ha Noi, Viet Nam https://orcid.org/0000-0002-7242-6006
Vo Thi Kieu Anh \(^2\) Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Nghia Do Ward, Ha Noi, Viet Nam https://orcid.org/0000-0003-1273-635X
Nguyen Van Trang \(^2\) Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Nghia Do Ward, Ha Noi, Viet Nam
Cao Thi Hong \(^2\) Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Nghia Do Ward, Ha Noi, Viet Nam
Nguyen Thi Thu Trang \(^2\) Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Nghia Do Ward, Ha Noi, Viet Nam
Tran Dai Lam \(^2\) Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Nghia Do Ward, Ha Noi, Viet Nam https://orcid.org/0000-0003-1364-8001

DOI:

https://doi.org/10.15625/2525-2518/23429

Keywords:

ZnO-based varistor, breakdown voltage, electrode area correction, DC resistivity

Abstract

This study aims to investigate the effects of electrode geometry and evaluation methods for electrode area on the electrical performance of ZnO-based varistors. A series of ZnO-based varistors was fabricated in the same composition and annealing conditions to investigate the influence of electrode geometry and electrode area evaluation methods on their electrical performance. SEM and XRD analyses of the varistors confirmed a dense microstructure with well-developed grain boundaries, with ZnO as the primary phase and modified spinel Zn_1.82Cr_0.78Sb_0.41O₄ as the main secondary phase, indicating their potential for good electrical performance as varistors and ensuring that the samples were suitable for electrical property measurements. Method 1 used the arithmetic mean, Method 2 used the geometric mean of the two electrode diameters, and Method 3 used the geometric mean with fringing correction, before calculating the area. DC electrical measurements revealed that the methods used to calculate the effective electrode diameter significantly affect the values of varistor voltages (U_1mA, U_10mA), current density (J), resistivity (ρ), and nonlinearity coefficient (α). Among these, Method 3 produced the smallest deviations in E_1mA and E_10mA and the best convergence of J–E and log(ρ)–E curves, particularly in the breakdown region. This correction also yielded the most consistent α values and minimized across-sample deviations, even in cases where electrodes had unequal sizes. These results underscore the importance of accurate area evaluation in characterizing varistor behavior.

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