Deep level transient spectroscopy characterization of defects in p-Si

Kim Oanh Vu Thi; Van Hai Bui; Xuan Tu Nguyen; Van Kha Nguyen; Thi Thu Phuong Bui; Eun Kyu Kim

doi:10.15625/0868-3166/23736

Author affiliations

Authors

Thi Kim Oanh Vu Graduate University of Science and Technology https://orcid.org/0000-0001-5889-9838
Hai Bui Van 3Le Quy Don Technical University, No. 236 Hoang Quoc Viet, Hanoi
Nguyen Xuan Tu 1No. 10 Dao Tan, Institute of Physics, Vietnam Academy of Science and Technology
Van Kha Nguyen 1No. 10 Dao Tan, Institute of Physics, Vietnam Academy of Science and Technology
Bui Thi Thu Phuong 1No. 10 Dao Tan, Institute of Physics, Vietnam Academy of Science and Technology
Eun Kyu Kim 4Department of Physics and Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul 04763, Republic of Korea

DOI:

https://doi.org/10.15625/0868-3166/23736

Keywords:

deep level transient spectroscopy, p-silicon, boron-related defects, defect density

Abstract

This study investigates defect states in p-silicon wafer using Deep Level Transient Spectroscopy method. Two-hole traps with activation energy of 0.32 and 0.58 eV were observed at temperatures of 212 and 252 K, respectively. These hole traps could be boron-related defects introduced during doping process. By using capacitance-voltage measurement, the doping concentration was estimated to be approximately 7$\times$10\textsuperscript{15} cm\textsuperscript{-3}, and the maximum defect density of about 4$\times$10\textsuperscript{14} cm\textsuperscript{-3}. The obtained results showed that the high defect states could be formed naturally during deposition progress. Understanding how defects interact within p-Si is essential for defect engineering in the future.

Downloads

Download data is not yet available.

References

[1] K. E. Wentz, A. F. Gittens and R. S. Klausen, Precise synthesis of complex {si--si molecular frameworks}, J. Am. Chem. Soc. 147 (2025) 2938.

[2] A. S. Abood, Silicon electrodeposition for microelectronics and distributed energy: {a mini-review}, Electrochem 3 (2022) 760.

[3] B. Hammann, F. Schindler, J. Sch{"o}n, W. Kwapil, M. C. Schubert and S. W. Glunz, Review on hydrogen in silicon solar cells: {from its origin to its detrimental effects}, Sol. Energy Mater. Sol. Cells 282 (2025) 113432.

[4] J. P. Wendoloski, J. Hillier, S. D. Liles, M. Rendell, Y. Ashlea-Alava, B. Raes Et al., Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon {__protected_0__s}, arXiv:2502.21173 (2025) !.

[5] W. Shockley, Statistics of the recombinations of holes and electrons, Phys. Rev. 87 (1952) 835.

[6] R. N. Hall, Electron--hole recombination in germanium, Phys. Rev. 87 (1952) 387.

[7] G. D. Watkins, Intrinsic defects in silicon, Mater. Sci. Eng. R 30 (2000) 1.

[8] D. K. Schroder, {https://doi.org/10.1002/0471749095{Semiconductor Material and Device Characterization}}. Wiley, Hoboken, 3rd ed., 2006.

[9] A. Ali, T. Gouveas, M.-A. Hasan, S. H. Zaidi and M. Asghar, Influence of deep level defects on the performance of crystalline silicon solar cells: experimental and simulation study, Sol. Energy Mater. Sol. Cells 95 (2011) 2805.

[10] D. V. Lang, Deep-level transient spectroscopy: {a new method to characterize traps in semiconductors}, J. Appl. Phys. 45 (1974) 3023.

[11] L. Dobaczewski, A. R. Peaker and K. B. Nielsen, Laplace-transform deep-level spectroscopy: the technique and its applications to the study of point defects in semiconductors, J. Appl. Phys. 96 (2004) 4689.

[12] X. Li, H. Yuan, S. Liu, Y. Feng and J. Luo, A novel high-resolution technique for the study of deep energy levels in semiconductors based on computerized {laplace-__protected_0__}, J. Mater. Sci. Mater. Electron. 35 (2024) 1856.

[13] H. S. Reehal, M. P. Lesniak and A. E. Hughes, Application of {__protected_0__ to silicon solar cell processing}, J. Phys. D: Appl. Phys. 29 (1996) 63.

[14] K. M. Paradowska, E. P{}aczek-Popko, M. A. Pietrzyk, K. Gw{'{o}}{'z}d{'z} and A. Kozanecki, Current transport and deep levels in {p-si/n-zno₀.9}{Mg}₀.1}{O}/{n-ZnO} heterojunction}, J. Alloys Compd. 691 (2017) 946.

[15] F. D. Auret, A. G. M. Das, C. Nyamhere, M. Hayes and N. G. van der Berg, Thermal stability of {ti/mo schottky contacts on {p-Si} and defects introduced in {p-Si} during electron beam deposition of {Ti/Mo}}, Solid State Phenom. 108--109 (2005) 561.

[16] O. Feklisova, N. Yarykin, E. B. Yakimov and J. Weber, On the nature of hydrogen-related centers in p-type irradiated silicon, Physica B 308--310 (2001) 210.

[17] D. V. Lang, Deep-level transient spectroscopy: {a new method to characterize traps in semiconductors}, J. Appl. Phys. 45 (1974) 3023.

[18] J. Pevlov, T. Ceponis, K. Pukas, L. Makarenko and E. Gaubas, 5.5 {mev electron irradiation-induced transformation of minority carrier traps in p-type {Si} and {Si}₁-x}{Ge}_x alloys}, Materials 15 (2021) 1861.

[19] S. Bakhlanov, N. Bazlov, I. Chernobrovkin, D. Danilov, A. Derbin Et al., Electrical active defects induced by -particle irradiation in p-type {si surface barrier detector}, Phys. Status Solidi A 218 (2021) 2100212.