The effect of Zn doping concentration on thermoelectric properties of CuAgSe
Author affiliations
DOI:
https://doi.org/10.15625/2525-2518/18603Keywords:
CuAgSe, doping, thermal conductivity, thermoelectricity, semiconductorAbstract
CuAgSe is a potential thermoelectric material with high carrier mobility and ultralow lattice thermal conductivity. In this study, to improve the thermoelectric properties of CuAgSe, Zn was doped at different ratios (x = 0, 0.02, 0.04, 0.06, 0.08, and 0.10) into Cu sites as the formula Cu1-xZnxAgSe. Zn-doping CuAgSe polycrystals were successfully fabricated by growth from the melt method. The crystal structure of CuAgSe samples was investigated by XRD. The effect of Zn-doping on the thermoelectric properties of CuAgSe samples was studied in the temperature range from 300 – 673 K. When doping Zn into CuAgSe samples, the lattice thermal conductivity reduces to about 0.3 W m-1 K-1 at 673 K and increases the electrical conductivity compared to undoped CuAgSe. Interestingly, the highest ZT value of Cu0.94Zn0.06AgSe is about 0.69 at 673 K, 3.5 times compared to undoped CuAgSe.Downloads
References
Hendricks, T.; Caillat, T.; Mori, T. - Keynote Review of Latest Advances in Thermoelectric Generation Materials, Devices, and Technologies 2022. Energies, 15 (2022), 7307. https://doi.org/10.3390/en15197307.
Biswas, K.; Ren, Z.; Grin, Y.; Lee, K. H.; Mori, T.; Chen, L. - Thermoelectric Materials Science and Technology toward Applications. Appl. Phys. Lett., 121 (2022), No. 070401. https://doi.org/10.1063/5.0115322.
Tan, G.; Ohta, M.; Kanatzidis, M. G. - Thermoelectric Power Generation: From New Materials to Devices. Philos. Trans. R. Soc. A, 377 (2019), No. 20180450. https://doi.org/10.1098/rsta.2018.0450.
Xiao, Y.; Zhao, L. D. - Charge and Phonon Transport in PbTe-Based Thermoelectric Materials. npj Quantum Mater., 3 (2018), No. 55. https://doi.org/10.1038/s41535-018-0127-y.
Pei, Y. L.; Wu, H.; Wu, D.; Zheng, F.; He, J. - High Thermoelectric Performance Realized in a BiCuSeO System by Improving Carrier Mobility through 3D Modulation Doping. J. Am. Chem. Soc., 136 (2014), 13902–13908. https://doi.org/10.1021/ja507945h.
Qian, X.; Wu, H.; Wang, D.; Zhang, Y.; Wang, J.; Wang, G.; Zheng, L.; Pennycook, S. J.; Zhao, L. D. - Synergistically Optimizing Interdependent Thermoelectric Parameters of N-Type PbSe through Alloying CdSe. Energy Environ. Sci., 12 (2019), 1969–1978. https://doi.org/10.1039/c8ee03386b.
Yang, Q.; Ming, C.; Qiu, P.; Zhou, Z.; Qiu, X.; Gao, Z.; Deng, T.; Chen, L.; Shi, X. - Incommensurately Modulated Structure in AgCuSe-Based Thermoelectric Materials for Intriguing Electrical, Thermal, and Mechanical Properties. Small, (2023) No. 2300699. https://doi.org/10.1002/smll.202300699.
Zuo, Y.; Liu, Y.; He, Q. P.; Song, J. M.; Niu, H. L.; Mao, C. J. - CuAgSe Nanocrystals: Colloidal Synthesis, Characterization and Their Thermoelectric Performance. J. Mater. Sci., 53 (2018), 14998–15008. https://doi.org/10.1007/s10853-018-2676-7.
Wang, X.; Qiu, P.; Zhang, T.; Ren, D.; Wu, L.; Shi, X.; Yang, J.; Chen, L. - Compound Defects and Thermoelectric Properties in Ternary CuAgSe-Based Materials. J. Mater. Chem. A, 3 (2015), 13662–13670. https://doi.org/10.1039/c5ta02721g.
Qiu, P. F.; Wang, X. B.; Zhang, T. S.; Shi, X.; Chen, L. D. - Thermoelectric Properties of Te-Doped Ternary CuAgSe Compounds. J. Mater. Chem. A, 3 (2015), 22454–22461. https://doi.org/10.1039/c5ta06780d.
Hong, A. J.; Li, L.; Zhu, H. X.; Zhou, X. H.; He, Q. Y.; Liu, W. S.; Yan, Z. B.; Liu, J. M.; Ren, Z. F. - Anomalous Transport and Thermoelectric Performances of CuAgSe Compounds. Solid State Ionics, 261 (2014), 21–25. https://doi.org/10.1016/j.ssi.2014.03.025.
Nguyen, T. H.; Nguyen, V. Q.; Pham, A. T.; Park, J. H.; Lee, J. E.; Lee, J. K.; Park, S.; Cho, S. - Carrier Control in CuAgSe by Growth Process or Doping. J. Alloys Compd., 852 (2021), No. 157094. https://doi.org/10.1016/j.jallcom.2020.157094.
Nguyen, T. H.; Nguyen, V. Q.; Park, J. H.; Tran, T. T.; Pham, A. T.; Park, S.; Rhyee, J. S.; Cho, S. - Raising n‑Type Thermoelectric Performance in (Te, Zn)-Codoped CuAgSe. ACS Appl. Energy Mater., 6 (2023), 6151−6156. https://doi.org/10.1021/acsaem.3c00683
Downloads
Published
How to Cite
Issue
Section
License
This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.
Vietnam Journal of Sciences and Technology (VJST) is an open access and peer-reviewed journal. All academic publications could be made free to read and downloaded for everyone. In addition, articles are published under term of the Creative Commons Attribution-ShareAlike 4.0 International (CC BY-SA) Licence which permits use, distribution and reproduction in any medium, provided the original work is properly cited & ShareAlike terms followed.
Copyright on any research article published in VJST is retained by the respective author(s), without restrictions. Authors grant VAST Journals System a license to publish the article and identify itself as the original publisher. Upon author(s) by giving permission to VJST either via VJST journal portal or other channel to publish their research work in VJST agrees to all the terms and conditions of https://creativecommons.org/licenses/by-sa/4.0/ License and terms & condition set by VJST.
Authors have the responsibility of to secure all necessary copyright permissions for the use of 3rd-party materials in their manuscript.
